We supply exclusively Microwave Plasma CVD (MPCVD) diamonds — the gold standard for uniformity, purity, and defect control. Substrates are certified under our Vajra-Sāra™ protocol, delivering 1800–2000 W/m·K Ultra-Thermal Grade with Ra < 1 nm — engineered for semiconductor R&D, DRDO defense, and next-generation AI hardware.
Our proprietary vetting and characterization engine. Every MPCVD substrate is evaluated against grade thresholds before receiving a Vajra-Crest designation — Raman spectroscopy, AFM surface mapping, SIMS purity analysis, and laser-flash thermal diffusivity testing.
Only MPCVD substrates that pass the full Vajra-Sāra protocol are released under the Vajra-Crest designation — the institutional guarantee extended to semiconductor R&D, DRDO procurement, and AI hardware design. Integrated picosecond laser machining enables custom geometries with ±10 µm accuracy.
All grades sourced exclusively via MPCVD.
Each lot is grade-assigned under Vajra-Sāra™ protocol.
| Parameter | Specification | Test Method | Grade |
|---|---|---|---|
| Thermal Conductivity | 1800–2000 W/m·K | Laser-flash diffusivity, ASTM E1461 | HTG |
| Surface Roughness Ra (Single Crystal) | < 1 nm | AFM, 10×10 µm scan area | HTG |
| Surface Roughness Ra (Polycrystalline) | < 5 nm | AFM, 10×10 µm scan area | STD |
| Crystal Structure | Single Crystal / PCD (MPCVD) | Raman FWHM < 2 cm⁻¹ | HTG |
| Isotopic Purity (¹²C) | > 99.99% | SIMS depth profiling | HTG |
| Nitrogen Content (Standard) | < 1 ppm | SIMS / EPR spectroscopy | STD |
| Nitrogen Content (Special Request) | < 0.05 ppm | SIMS depth profiling | HTG |
| CTE (20–300 °C) | ~1.0 × 10⁻⁶ K⁻¹ | DIL 402 pushrod dilatometer | STD |
| Substrate Diameter | Up to Ø 100 mm | Optical metrology | STD |
| Custom Geometry (Laser) | 1 mm – 10 mm, ±10 µm | Picosecond laser machining | STD |
| Thickness Tolerance | ± 5 µm | Single-point diamond turning | HTG |
| Dielectric Constant (εᵣ) | 5.7 @ 1 MHz | Impedance spectroscopy | STD |
| Breakdown Voltage | > 10 MV/cm | High-voltage probe station | STD |
| Optical Transparency | UV–IR (225 nm – 25 µm) | FTIR & UV-Vis spectroscopy | STD |
* All specifications subject to lot-level Certificate of Analysis (CoA). HTG = 1800–2000 W/m·K Ultra-Thermal Grade. Custom tolerances available for qualified DRDO / semiconductor R&D contracts.
Key intrinsic properties of MPCVD diamond substrate — matched to Si, GaN, and SiC device stacks.
During our MPCVD growth and Vajra-Sāra™ characterization process, substrates that do not achieve optical surface grade or full geometry tolerances are classified as Industrial High-Thermal Rejects. These substrates maintain ≥1400 W/m·K thermal conductivity and are fully viable for non-optical heat-spreading applications — offered at significantly reduced cost with full thermal CoA.
Industrial Rejects are available in limited quantities on a per-lot basis. Enquire via solutions@vajra-crest.com with your thermal floor requirement and geometry. Minimum order applies.
Vajra-Crest operates precision picosecond laser machining for custom substrate geometries. The ultrashort pulse duration (<10 ps) minimises heat-affected zones, preserving the thermal and crystalline integrity of the diamond substrate at cut edges — critical for precision semiconductor and defence packaging applications.
Lab-ready MPCVD substrates for epitaxial growth, GaN-on-Diamond power device fabrication, and thermal interface research at IITs, IISc, and private fabs.
Ultra-Thermal Grade substrates for radar power modules, MMIC packaging, and directed-energy thermal management systems requiring guaranteed >1800 W/m·K.
Diamond heatspreaders and precision-machined custom geometries for next-generation AI accelerator chips, addressing the thermal wall in dense 3D chip-stacking.
We work exclusively with institutional partners. Submissions are reviewed by our materials science team within 72 hours. All technical requirements are treated with strict confidentiality under our standard NDA framework.