CVD Diamond Engineering · Quantum · Defense · AI Infrastructure

Advancing Global Innovation with High-Precision CVD Diamond Engineering.

Providing the material backbone for High-Power AI Infrastructure, Strategic Defense, and Quantum Metrology — grown exclusively by Microwave Plasma CVD (MPCVD), certified under the Vajra-Sāra™ protocol, and delivered with a lot-level Certificate of Analysis.

MPCVD
Growth Method (Exclusive)
2000 W/m·K
Ultra-Thermal Peak
< 1 nm
Surface Roughness Ra
±10 µm
Laser Machining Accuracy
The Vajra Materials Framework
Internal Engine
Vajra-Sāra™
वज्र-सार · "The Diamond Essence"

Our proprietary vetting and characterization engine. Every MPCVD substrate is evaluated against grade thresholds before receiving a Vajra-Crest designation — Raman spectroscopy, AFM surface mapping, SIMS purity analysis, and laser-flash thermal diffusivity testing.

Raman Spectroscopy (FWHM < 2 cm⁻¹)
AFM Surface Profiling (10×10 µm)
SIMS Isotopic & Nitrogen Verification
Laser-Flash Diffusivity (ASTM E1461)
Birefringence Optical Mapping
Customer-Facing Brand
Vajra-Crest™
वज्र-क्रेस्ट · "The Diamond Standard"

Only MPCVD substrates that pass the full Vajra-Sāra protocol are released under the Vajra-Crest designation — the technical guarantee extended to quantum information science, power electronics, and global scientific instrumentation. Integrated picosecond laser machining enables custom geometries with ±10 µm accuracy.

MPCVD Exclusively — Superior Uniformity & Purity
Ultra-Thermal Grade (1800–2000 W/m·K)
Ra < 1 nm Single Crystal / Ra < 5 nm Poly
Picosecond Laser Machining (1–10 mm, ±10 µm)
Lot-Level CoA · Custom Geometries · Ø 100 mm
MPCVD Growth (Surat)
Vajra-Sāra™ Characterization
Grade Assignment
Laser Machining
Certified Delivery
Three-Tier Thermal Grade System

All grades sourced exclusively via MPCVD.
Each lot is grade-assigned under Vajra-Sāra™ protocol.

Standard Grade
1200–1500
W/m·K Thermal Conductivity
Polycrystalline (PCD) morphology
Ra < 5 nm (polished)
Nitrogen < 1 ppm
General thermal management
Lot-level CoA included
High-Thermal Grade
1500–1800
W/m·K Thermal Conductivity
Single Crystal / high-purity PCD
Ra < 2 nm (polished)
Nitrogen < 0.5 ppm
MMIC, RF, power device substrates
Picosecond machining available
Ultra-Thermal Grade · HTG
1800–2000
W/m·K Thermal Conductivity
Single Crystal, <001> oriented
Ra < 1 nm (DSP polished)
Nitrogen < 0.05 ppm (special request)
AI hardware, defense, quantum sensing platforms
Full Vajra-Sāra™ certification suite
CVD Diamond Substrate Specifications
HTG = Ultra-Thermal Grade
STD = Standard
ParameterSpecificationTest MethodGrade
Surface Roughness Ra (Single Crystal)< 1 nmAFM, 10×10 µm scan areaHTG
Surface Roughness Ra (Polycrystalline)< 5 nmAFM, 10×10 µm scan areaSTD
Crystal StructureSingle Crystal / PCD (MPCVD)Raman FWHM < 2 cm⁻¹HTG
Isotopic Purity (¹²C)> 99.99%SIMS depth profilingHTG
Nitrogen Content (Standard)< 1 ppmSIMS / EPR spectroscopySTD
Nitrogen Content (Special Request)< 0.05 ppmSIMS depth profilingHTG
CTE (20–300 °C)~1.0 × 10⁻⁶ K⁻¹DIL 402 pushrod dilatometerSTD
Substrate DiameterUp to Ø 100 mmOptical metrologySTD
Custom Geometry (Laser)1 mm – 10 mm, ±10 µmPicosecond laser machiningSTD
Thickness Tolerance± 5 µmSingle-point diamond turningHTG
Dielectric Constant (εᵣ)5.7 @ 1 MHzImpedance spectroscopySTD
Breakdown Voltage> 10 MV/cmHigh-voltage probe stationSTD
Optical TransparencyUV–IR (225 nm – 25 µm)FTIR & UV-Vis spectroscopySTD

* All specifications subject to lot-level Certificate of Analysis (CoA). HTG = 1800–2000 W/m·K Ultra-Thermal Grade. Custom tolerances and isotopic enrichment available for qualified research and defense contracts.

Technical Baseline Properties

Key intrinsic properties of MPCVD diamond substrate — matched to Si, GaN, and SiC device stacks.

Thermal Expansion (CTE)
~1.0 × 10⁻⁶ /K
Near-identical to GaN (~5.6×10⁻⁶), SiC (~4.0×10⁻⁶), and Si (~2.6×10⁻⁶) device layers — minimising thermal stress at bonding interfaces across −55°C to +300°C operating range.
Surface Roughness Ra
SC: <1 nm · Poly: <5 nm
Single Crystal (SC) polished surfaces achieve Ra < 1 nm for epitaxial-grade applications. Polycrystalline (Poly) polished substrates maintain Ra < 5 nm for heatspreader and thermal interface applications.
Nitrogen Purity
<1 ppm · <0.05 ppm SR
Standard grade: < 1 ppm nitrogen (Type IIa class). Special Request (SR) grade: < 0.05 ppm for quantum sensing, ultra-low-loss RF, and precision optical window applications. Verified by SIMS.
Industrial High-Thermal Rejects
Non-Optical · Heat-Spreading Grade
Performance Without Perfection

During our MPCVD growth and Vajra-Sāra™ characterization process, substrates that do not achieve optical surface grade or full geometry tolerances are classified as Industrial High-Thermal Rejects. These substrates maintain ≥1400 W/m·K thermal conductivity and are fully viable for non-optical heat-spreading applications — offered at significantly reduced cost with full thermal CoA.

Thermal Conductivity: ≥ 1400 W/m·K (guaranteed)
Surface: Ra 5–50 nm (as-lapped or partial polish)
Geometry: ±50 µm dimensional tolerance
Full lot-level thermal CoA provided
Significant cost reduction vs. certified HTG grade
Qualified Use Cases
High-power LED / laser diode heatspreaders
Industrial RF amplifier thermal substrates
EV power module thermal interface materials
Prototype / early-stage R&D thermal testing
Non-critical MMIC package backing plates
General industrial heat-spreading applications
Availability

Industrial Rejects are available in limited quantities on a per-lot basis. Enquire via solutions@vajra-crest.com with your thermal floor requirement and geometry. Minimum order applies.

Quantum & Electronic Grade

Type IIa Single-Crystal MPCVD · Purity-First Protocol

Technical Specification Sheet VC-QEG-001 · REV 1.0
Quantum / Electronic Grade Diamond Substrate — Type IIa
Parameter Symbol Specification Verification Method
Grade Classification Quantum / Electronic Grade (Type IIa) MPCVD Single Crystal
Nitrogen Content [N] < 5 ppb SIMS / EPR Spectroscopy
Boron Content [B] < 1 ppb SIMS Depth Profiling
Surface Roughness Ra < 5 nm  (Super-polished) AFM 10×10 µm
Crystal Orientation {100} Standard  ·  {111} on request XRD / EBSD
Dislocation Density ρd < 105 cm−2 Etch Pit / Birefringence Map

Custom doping (Nitrogen/Boron) and isotopic enrichment (12C) available for specific NV-center research requirements.

Application Brief · QS-AB-001

Substrates for Quantum Magnetometers
& Diamond-Based Metrology

Application Brief · Rev 1.0 · Confidential

Engineering the Coherence Vacuum
for NV-Center Platforms

Target: Quantum Magnetometers · Diamond NV Metrology · MCI Systems

Vajra-Crest provides the high-coherence "vacuum" required for next-generation quantum sensing. Our substrates are engineered to minimize paramagnetic noise, enabling unprecedented sensitivity in Magnetic Current Imaging (MCI) — where every part-per-billion of nitrogen or boron translates directly to decoherence and lost signal fidelity.

NV-center performance is governed not by the diamond itself, but by the impurity landscape surrounding each spin. Substitutional nitrogen ([Ns0]) is the dominant paramagnetic bath; boron introduces competing spin-½ defects. Vajra-Crest Type IIa substrates are grown under MPCVD conditions optimised for radical impurity suppression — delivering the clean host matrix that coherence time T2 demands.

Plasma-etched {100} surfaces eliminate sub-surface damage layers that would otherwise scatter implanted nitrogen ions, producing a strain-free landing zone for delta-doped NV layers. Every substrate ships ESR-characterised and PL-mapped, so your implantation team starts with confirmed coherence baseline data, not assumptions.

Material Parameters
Isotopic Composition
12C > 99.999%
Isotopically purified MPCVD · eliminates 13C nuclear spin bath
Nitrogen Content [N]
< 5 ppb
Verified by SIMS & EPR · suppresses Ns0 paramagnetic bath
Boron Content [B]
< 1 ppb
SIMS depth profile · eliminates competing spin-½ acceptor defects
Surface Preparation
Plasma-etched · {100}
Strain-free · zero sub-surface damage · stable NV implantation zone
Characterisation
PL Mapping · ESR-Ready
Full-surface photoluminescence map · coherence baseline confirmed pre-shipment
Custom 12C enrichment levels and delta-doped NV layer specifications available on request. Request Quantum Sensing Data Sheet →
Picosecond Laser Precision Machining

Vajra-Crest operates precision picosecond laser machining for custom substrate geometries. The ultrashort pulse duration (<10 ps) minimises heat-affected zones, preserving the thermal and crystalline integrity of the diamond substrate at cut edges — critical for precision semiconductor and defence packaging applications.

Geometry range: 1 mm to 10 mm custom shapes
Dimensional accuracy: ±10 µm
Pulse duration: <10 ps (minimal heat-affected zone)
Shapes: square, rectangular, round, custom polygon
Post-machining edge inspection & CoA update
Compatible with all three thermal grade tiers
<10 ps
Pulse Duration
±10 µm
Accuracy
1–10 mm
Geometry Range
~Min HAZ
Heat-Affected Zone
Why Picosecond vs. Nanosecond
Nanosecond lasers generate significant thermal energy, risking graphitisation and micro-cracking at cut edges. Picosecond pulses ablate material through non-thermal mechanisms — preserving diamond sp³ bonding at the kerf.
Picosecond (Vajra-Crest)
Non-thermal ablation · sp³ preserved · ±10 µm · clean kerf
Nanosecond (Industry Standard)
Thermal process · graphitisation risk · ±50 µm · rough kerf
Packaging Formats
Cleanroom gel-pack · N₂-purged sealed pouch
Individual lot labelling · CoA documentation included
Three Pillars. One Material Platform.
Thermal Performance
AI & Power Electronics

Diamond is the only substrate that addresses the thermal wall in dense AI accelerator stacks and GaN-on-Diamond power devices. Ultra-Thermal Grade substrates deliver guaranteed 1800–2000 W/m·K — measured per lot under LFA ASTM E1461, not nominal values. Integrated picosecond laser machining produces custom heatspreader geometries at ±10 µm.

Thermal Conductivity 1800–2000 W/m·K
Surface Ra < 1 nm
Machining Accuracy ±10 µm
Institutional Reliability
🛡️
Strategic Infrastructure

Defense-grade and institutional-grade procurement demands substrate consistency across lots, not just across samples. Every Vajra-Crest delivery carries a lot-level Certificate of Analysis under the Vajra-Sāra™ protocol — covering thermal conductivity, surface finish, purity, and crystallographic quality. Standard NDA executed at inquiry; defence-specific annexes available.

Lot Certification CoA · Every Lot
NDA Turnaround 2 Business Days
Characterisation Vajra-Sāra™ Protocol
Atomic Purity
🔬
Quantum Metrology

NV-center coherence time T2 is directly limited by the paramagnetic impurity landscape of the host diamond. Vajra-Crest Type IIa substrates push nitrogen below 5 ppb and boron below 1 ppb — verified by SIMS and EPR. Isotopically purified 12C (>99.999%) eliminates the 13C nuclear spin bath. Substrates ship PL-mapped and ESR-characterised.

Nitrogen [N] < 5 ppb
Boron [B] < 1 ppb
12C Purity > 99.999%
Global Procurement Assurance
Standards & Compliance
Vajra-Sāra™
Certified

Every substrate undergoes our proprietary spectroscopic and thermal characterization protocol before release under the Vajra-Crest designation.

ISO 9001
Alignment

Processes designed to meet international quality management standards for advanced materials, supporting procurement audit requirements.

RoHS & REACH
Compliant

100% lead-free and chemical-safe synthetic diamond substrates. No hazardous substances — fully compliant with EU and international environmental directives.

Conflict-Free
Sourcing

All materials are lab-grown via MPCVD with a transparent, traceable, and sustainable supply chain. Zero reliance on artisanal or mined diamond.

Export
Readiness

Compliant with international shipping and trade regulations for dual-use advanced materials. Documentation packages available for customs and institutional procurement.

Request a Technical Consultation

We partner with global research facilities, quantum technology labs, and deep-tech innovators. Submissions are reviewed by our materials science team within 72 hours. All technical requirements are treated with strict confidentiality under our standard NDA framework.

Founder & CEO
Technical Inquiries
Procurement & Sales
Location
WeWork RMZ Spire, Silpa Gram Craft Village
Hitech City, Hyderabad 500081, Telangana

Submission failed — please email us at technical@vajra-crest.com

Protected under standard NDA. Global research organizations and deep-tech firms welcome.